Process for producing boron nitride
AssigneeGeneral Electric Company
InventorsDonald Pultz, Laurence Maniccia, Chandrashekar Raman, Anand Murugaiah
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Abstract
A process for producing boron nitride of high purity and high thermal conductivity, wherein a oxygen-containing boron compound is reacted with a nitrogen-containing source in the presence of a dopant at a temperature of at least 1000° C. for at least one hour, and wherein the dopant forms metal borate impurities with a vaporizing temperature that is lower than the highest processing temperature in the process.
Claims26
A process for producing hexagonal boron nitride compound, which comprises:
- reacting an oxygen-containing boron compound with a nitrogen-containing source in the presence of one or more compounds used as dopants at a processing temperature of at least 1000° C. for at least one hour to form a hexagonal boron nitride compound,
- wherein the dopants are metal compounds that form metal borates with a vaporizing temperature that is lower than the processing temperature.
A process for producing hexagonal boron nitride compound, which process comprising the steps of:
- a) forming a mixture of an oxygen-containing boron compound, a nitrogen-containing source, and a dopant, the dopant being present at an amount of at least 1 wt. % of the total weight of the oxygen-containing boron compound and the nitrogen-containing source;
- b) heating the mixture at a temperature of at least 200° C. for at least ½ hour to dry off any moisture in the mixture;
- c) subjecting the mixture to a processing temperature of at least 1200° C. for at least one hour to form a hexagonal boron nitride compound;
- wherein the dopant is a metal compound that forms a metal borate with a vaporizing temperature that is lower than the processing temperature.
Dependencies are inferred from the claim text.