Semiconductor laser device and optical pick-up device using the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorToru Takayama
Life of this patent
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Abstract
A semiconductor laser device includes, on a substrate: an active layer and two clad layers which sandwich the active layer; and a waveguide diverging region formed in a photonic crystal having a photonic band gap, where the waveguide diverging region diverges, in at least two directions, a waveguide region formed between end faces of an optical path.
Claims16
A semiconductor laser device including, on a substrate, an active layer and two clad layers which sandwich the active layer, said semiconductor laser device comprising
- a waveguide diverging region which diverges, in at least two directions, a waveguide region that is formed between end faces of an optical path, said waveguide diverging region being formed in a photonic crystal having a photonic band gap.
Semiconductor laser device comprising
- semiconductor lasers integrated on a substrate which allow light of at least two types of wavelength to emerge, each laser including an active layer and two clad layers which sandwich the active layer,
- wherein at least one end face of a waveguide region formed between end faces of an optical path includes a waveguide diverging region which diverges said waveguide region into two directions and is formed in a photonic crystal having a photonic band gap.
An optical pick-up device comprising:
- a semiconductor laser which includes, on a substrate:
- (a) an active layer and two clad layers which sandwich said active layer;
- and (b) a waveguide diverging region which diverges, in at least two directions, a waveguide region formed between end faces of an optical path, said waveguide diverging region being formed in a photonic crystal having a photonic band gap;
- and
- a light-receiving area which receives a reflected light being a light which emerges from said semiconductor laser device and is reflected on a storage medium.
A method of manufacturing a semiconductor laser device which includes, on a substrate, an active layer and two clad layers that sandwich the active layer, said method comprising:
- forming a waveguide diverging region in a photonic crystal having a photonic band gap, said waveguide diverging region diverging, in at least two directions, a waveguide region formed between end faces of an optical path.
Dependencies are inferred from the claim text.