Voltage supply circuit, in particular for a DRAM memory circuit, as well as a method for controlling a supply source

An integrated dynamic random access memory (DRAM) circuit, comprising:

• a plurality of memory cells;
• and
• a voltage supply circuit connected to provide an internal supply voltage to the memory cells, the voltage supply circuit comprising:
• a supply source for setting the internal supply voltage on a supply voltage line;
• a pulse transmitter configured to provide a periodic signal for switching on the supply source;
• and
• a control circuit configured to selectively switch the supply source on and off based on a comparison between a voltage level on the supply voltage line and a reference level, whereby a predefined voltage level is maintained on the supply voltage line.

An integrated DRAM circuit, comprising:

• a plurality of memory cells;
• and
• a plurality of voltage supply circuits, each voltage supply circuit connected to provide a respective internal supply voltage to one or more memory cells, each voltage supply circuit comprising a respective supply source for setting the respective internal supply voltage on a respective supply voltage line;
• and
• a common control unit configured to switch-off the supply sources at the same time when switch-off signals have been received for each of the plurality of supply sources, wherein the common control unit includes a plurality of determination units, each unit configured to determine whether a respective voltage level on the respective supply voltage line has reached the respective internal supply voltage.