Internal voltage generator for a semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorChang-Ho Do
Life of this patent
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Abstract
Provided is an internal voltage generator for a semiconductor memory includes: a first internal voltage drive device for driving an internal voltage in response to a first reference voltage corresponding to a target level of an internal voltage; and a second internal voltage drive device for driving the internal voltage in response to a second reference voltage having a lower level than the first reference voltage.
Claims8
An internal voltage generator for use in a semiconductor memory device, the apparatus comprising:
- a first internal voltage drive means for driving an internal voltage in response to a first reference voltage corresponding to a target level of an internal voltage;
- and
- a second internal voltage drive means for driving the internal voltage in response to a second reference voltage with having a lower level than the first reference voltage.
An internal voltage generator for use in a semiconductor memory device, the apparatus comprising:
- a first comparison means for comparing a first reference voltage corresponding to a target level of an internal voltage with a level of a feedback internal voltage;
- a first pull-up drive means for pull-up driving an internal voltage in response to a first drive control signal from the first comparison means;
- a second comparison means for comparing a second reference voltage with having a lower level than the first reference voltage with a level of the feedback internal voltage;
- and
- a second pull-up drive means for pull-up driving the internal voltage in response to a second drive control signal from the second comparison means.
An internal voltage generator for use in a semiconductor memory device, the apparatus comprising:
- a first comparison means for comparing a first reference voltage corresponding to a target level of an internal voltage with a level of a feedback internal voltage;
- a first pull-up drive means for pull-up driving an internal voltage in response to a first drive control signal from the first comparison means;
- a test mode decision means for generating an internal voltage test mode enable signal;
- a multiplexing means for generating as a second reference voltage one of a plurality of reference voltages with different levels, which are lower than a level of the first reference voltage, in response to the internal voltage test mode enable signal;
- a second comparison means for comparing the second reference voltage from the multiplexing means with the level of the feedback internal voltage;
- and
- a second pull-up drive means for pull-up driving the internal voltage in response to a second drive control signal from the second comparison means.
Dependencies are inferred from the claim text.