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OwnerRaul-Adrian Cernea, Yan Li +2inventors
InventorsRaul-Adrian Cernea, Yan Li, Shahzad Khalid, Siu Chan
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A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has an architecture that reduces redundancy in the multiple read/write circuits to a minimum. The multiple read/write circuits are organized into a bank of similar stacks of components. Redundant circuits such as a processor for processing data among stacks each associated with multiple memory cells are factored out. The processor is implemented with an input logic, a latch and an output logic. The input logic can transform the data received from either the sense amplifier or the data latches. The output logic further processes the transformed data to send to either the sense amplifier or the data latches or to a controller. This provides an infrastructure with maximum versatility and a minimum of components for sophisticated processing of the data sensed and the data to be input or output.
A non-volatile memory device, comprising:
A method of processing data for non-volatile memory among a set of sense amplifiers and data latches, comprising:
Dependencies are inferred from the claim text.