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US 2006/0140006 A1Published application
Method and apparatus for operating a non-volatile memory device
AssigneeMacronix International Co., Ltd.
InventorChih Chieh Yeh
Life of this patent
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Abstract
A nonvolatile memory cell with a charge trapping structure coupled in series is read, by measuring current that flows between the body region of the nonvolatile memory cell and the contact region of the nonvolatile memory cell. The charge storage state of the charge trapping structure affects the measured current.
Claims49
A method of operating a memory cell comprising a body region, a contact region, a bottom dielectric, a charge trapping structure, a top dielectric, and a gate, the method comprising:
- applying a first bias arrangement to determine the charge storage state of the charge trapping structure;
- and
- measuring current flowing between the body region and the contact region to determine the charge storage state of the charge trapping structure.
A nonvolatile memory, comprising:
- a body region;
- a contact region coupled to the body region;
- a bottom dielectric coupled to the body region;
- a charge trapping structure coupled to the bottom dielectric having a charge storage state;
- a top dielectric coupled to the charge trapping structure;
- a gate coupled to the top dielectric;
- and
- logic coupled to the gate and the contact region, said logic 1) applying a first bias arrangement to determine the charge storage state and 2) measuring current flowing between the body region and the contact region to determine the charge storage state of the charge trapping structure.
5 more elements
A method of manufacturing nonvolatile memory, comprising:
- providing a semiconductor substrate;
- providing a body region;
- providing a contact region coupled to the body region;
- providing a bottom dielectric coupled to the body region;
- providing a charge trapping structure coupled to the bottom dielectric having a charge storage state;
- providing a top dielectric coupled to the charge trapping structure;
- providing a gale coupled to the top dielectric;
- and
- providing logic coupled to the gate and the contact region, said logic 1) applying a first bias arrangement to determine the charge storage state and 2) measuring current flowing between the body region and the contact region to determine the charge storage state of the charge trapping structure.
6 more elements
Dependencies are inferred from the claim text.