One time programmable memory
OwnerAli Keshavarzi, Fabrice Paillet +6inventors
InventorsAli Keshavarzi, Fabrice Paillet, Muhammad Khellah, Dinesh Somasekhar, Yibin Ye, Stephen Tang, Mohsen Alavi, Vivek De
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Abstract
A one time programmable memory includes isolated gate transistors that may be programmed by subjecting the isolated gate transistors to voltage conditions that degrade characteristics of the isolated gate transistors. The degraded characteristics may be sensed to read the memory.
Claims23
An apparatus comprising:
- an addressable array of isolated gate transistors;
- driver circuitry coupled to the addressable array of isolated gate transistors to cause gate insulator degradation;
- and
- sensing circuitry to read the addressable array.
A memory device having been programmed by subjecting isolated gate transistors to conditions that cause an impact ionization current.
A method comprising programming a memory device by causing gate insulator degradation to at least one isolated gate transistor.
An electronic system comprising:
- a processing device;
- a static random access memory coupled to the processing device;
- and
- a one time programmable (OTP) memory coupled to the processing device, wherein the OTP memory includes an array of isolated gate transistors programmed by gate insulator degradation.
Dependencies are inferred from the claim text.