Magnetic memory device and method

A method of manufacturing a magnetic memory device, the method comprising:

• forming a transistor in a substrate;
• forming on the substrate a first interlayer insulating layer covering the transistor;
• forming in the first interlayer insulating layer a via hole exposing a source of the transistor;
• filling the via hole with a conductive plug;
• forming on the first interlayer insulating layer a first magnetic field generating component contacting the conductive plug;
• and
• forming an MTJ (magnetic tunnel junction) on a predetermined region of the first magnetic field generating component separated from the conductive plug.

A method of manufacturing a magnetic memory device, the method comprising:

• forming a transistor in a substrate;
• forming on the substrate a first interlayer insulating layer covering the transistor;
• forming in the first interlayer insulating layer a via hole exposing a source of the transistor;
• filling the via hole with a conductive plug;
• forming on the first interlayer insulating layer an MTJ (magnetic tunnel junction) cell covering a top surface of the conductive plug;
• forming on the first interlayer insulating layer a second interlayer insulating layer surrounding sides of the MTJ;
• and
• forming on the second interlayer insulating layer a first magnetic field generating component having a first end portion contacting a top surface of the MTJ and a second end portion contacting the bit line.