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US 2006/0139991 A1Published application
Magnetic memory device, method for writing magnetic memory device and method for reading magnetic memory device
AssigneeFujitsu Limited
InventorMasaki Aoki
Life of this patent
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Abstract
The magnetic memory device comprises: a memory cell including two magnetoresistive effect elements serially connected to each other, and a select transistor connected to a connection node between the two magnetic resistant devices, a bit line connected to the connection node of the magnetoresistive effect elements via the select transistor, and a read circuit for reading information memorized in the magnetoresistive effect elements, based on a voltage of the connection node outputted to the bit line.
Claims20
A magnetic memory device comprising:
- a memory cell including:
- a first magnetoresistive effect element;
- a second magnetoresistive effect element serially connected to the first magnetoresistive effect element;
- and
- a select transistor connected to a connection node between the first magnetoresistive effect element and the second magnetoresistive effect element;
- a bit line connected to the connection node between the first magnetoresistive effect element and the second magnetoresistive effect element via the select transistor;
- and
- a read circuit connected to the bit line for reading memorized information in the memory cell defined by a resistance state of the first magnetoresistive effect element and a resistance state of the second magnetoresistive effect element based on a voltage of the connection node.
5 more elements
A magnetic memory device comprising:
- a plurality of memory cells laid out in a matrix each including:
- a first magnetoresistive effect element;
- a second magnetoresistive effect element having one end connected to one end of the first magnetoresistive effect element;
- and
- a select transistor connected to a connection node between the first magnetoresistive effect element and the second magnetoresistive effect element;
- a plurality of first signal lines extended in a first direction and in parallel with each other, each of the first signal lines being connected to the other ends of the first magnetoresistive effect elements of the memory cells laid out in the first direction;
- a plurality of second signal lines laid out in the first direction and in parallel with each other, each of the second signal lines being connected to the other ends of the second magnetoresistive effect elements of the memory cells laid in the first direction;
- a plurality of third signal lines laid out in a second direction normal to the first direction and in parallel with each other, each of the third signal lines intersecting the first signal lines in regions where the first magnetoresistive effect elements of the memory cells laid out in the second direction are formed and intersecting the second signal lines in regions where the second magnetoresistive effect elements of the memory cells laid out in the second direction are formed;
- a plurality of bit lines laid out in the second direction and in parallel with each other, each of the bit lines being connected, via the select transistors, to the connection nodes of the memory cells laid out in the second direction;
- and
- a plurality of read circuits disposed at one ends of said plurality of bit lines for the respective couples of the adjacent ones of the bit lines.
8 more elements
A method for reading a magnetic memory device comprising:
- a memory cell including:
- a first magnetoresistive effect element;
- a second magnetoresistive effect element serially connected to the first magnetoresistive effect element;
- and a select transistor connected to a connection node between the first magnetoresistive effect element and the second magnetoresistive effect element;
- and a bit line connected to the connection node between the first magnetoresistive effect element and the second magnetoresistive effect element via the select transistor,
- reading a memorized information defined by a resistance state of the first magnetoresistive effect element and a resistance state of the second magnetoresistive effect element based on a voltage of the connection node outputted to the bit line when a read voltage is applied to a serial connection of the first magnetoresistive effect element and the second magnetoresistive effect element.
3 more elements
A method for writing a magnetic memory device comprising:
- a memory cell including a first magnetoresistive effect element, a second magnetoresistive effect element serially connected to the first magnetoresistive effect element, and a select transistor connected to a connection node between the first magnetoresistive effect element and the second magnetoresistive effect element;
- a bit line connected to the connection node between the first magnetoresistive effect element and the second magnetoresistive effect element via the select transistor;
- a first signal line connected to one end of the first magnetoresistive effect element, which is opposite to the connection node with the second magnetoresistive effect element;
- a second signal line connected to one end of the second magnetoresistive effect element opposed to the connection node with the first magnetoresistive effect element;
- and a third signal line disposed near the first magnetoresistive effect element and the second magnetoresistive effect element,
- writing in the first magnetoresistive effect element a first resistance state by a synthesized magnetic field of a magnetic field generated by current flowing in the first signal line and a magnetic field generated by current flowing in the third signal line,
- writing in the second magnetoresistive effect element a second resistance state complementary with the first resistance state by a synthesized magnetic field of a magnetic field generated by current flowing in the second signal line and a magnetic field generated by current flowing in the third signal line.
4 more elements
Dependencies are inferred from the claim text.