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US 2006/0139985 A1Published application
Non-volatile semiconductor storage device performing ROM read operation upon power-on
AssigneeKabushiki Kaisha Toshiba
InventorsKazushige Kanda, Hiroshi Nakamura
Life of this patent
Estimating the term…
Abstract
A power-on reset circuit has a power-on level detecting circuit which detects a power voltage to output a power-on reset signal and a delay circuit which delays the power-on reset signal output by the power-on level detecting circuit. Two chip address specifying pads are connected to the delay circuit. Delay time in the delay time is controlled according to a chip address supplied to these two pads.
Claims10
1-21. (canceled)
A data read method for a semiconductor device having a plurality of independently-controllable ROM regions;
- inputting a read command and a read address after a power supply voltage is applied, the read command and read address including information that corresponds to one of the ROM regions;
- and
- reading data out of the ROM region specified by the information included in the read command and read address, after the read command and read address are input.
Dependencies are inferred from the claim text.