Magnetic random access memory

A magnetic random access memory comprising:

• a plurality of magnetoresistive elements each comprising a first ferromagnetic layer whose magnetization direction is fixed, and a second ferromagnetic layer whose magnetization direction changes in accordance with an applied magnetic field, the plurality of magnetoresistive elements being arranged in an array state;
• and
• a plurality of first write lines each extending a first direction and for use in write data with respect to one of the plurality of magnetoresistive elements,
• wherein the second ferromagnetic layer comprises:
• a main body having a long-axis direction;
• and a jut which juts from the main body in a direction different from the long-axis direction.

A magnetoresistive element comprising:

• a first ferromagnetic layer whose magnetization direction is fixed;
• and
• a second ferromagnetic layer whose magnetization direction changes in accordance with an applied magnetic field,
• wherein the second ferromagnetic layer comprises:
• a main body having a long-axis direction;
• and a jut jutting in the short-axis direction of the main body from a middle of the main body, and
• a size of the jut is smaller than that of the main body.