Liquid crystal display device and fabrication method thereof

A method of for fabricating a liquid crystal display device comprising:

• providing a first substrate including a pixel portion and a having first and second regions;
• forming an active pattern on the pixel portion and the driving circuit portion of the first substrate;
• forming a first insulation film on the first substrate;
• forming a first gate electrode with a low-resistance conductive material on an upper portion of an active pattern;
• forming a second electrode to completely cover the first gate electrode on an exposed portion of the first gate electrode;
• forming N type source and drain regions in the pixel portion and the active pattern of the first region of the driving circuit part by doping an n+ impurity ion;
• forming P type source and drain regions in the active pattern of the second region of the driving circuit part by doping a p+ type impurity ion;
• forming a second insulation film on the first substrate;
• forming N type source and drain electrodes electrically connected with the N type source and drain regions at the pixel portion and the first region of the driving circuit part and forming P type source and drain electrodes electrically connected with the P type source and drain regions at the second region of the driving circuit portion;
• and
• attaching the first substrate and a second substrate.

A liquid crystal display device comprising:

• a first substrate having first and second regions;
• an N type thin film transistor formed at the first region of the first substrate and including a gate electrode having a first gate electrode formed of a low-resistance conductive material and a second gate electrode formed to completely cover the first gate electrode, an N type active pattern, and source and drain electrodes;
• and
• a P type thin film transistor on the same layer of the second region corresponding to the gate electrode, the active pattern and the source and drain electrodes of the first region and including a gate electrode having a first gate electrode formed of the low-resistance conductive material and a second gate electrode formed to cover the first gate electrode at an upper portion thereto, a P type active pattern and source and drain electrodes.