FED having polycrystalline silicon film emitters and method of fabricating polycrystalline silicon film emitters
OwnerDin-Guo Chen, Jeng-Hung Sun +1inventors
InventorsDin-Guo Chen, Jeng-Hung Sun, Shyuan-Jeng Ho
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Abstract
An FED using polycrystalline silicon film emitters has a substrate divided into a plurality of pixel regions, a plurality of polycrystalline silicon film emitters disposed within the pixel regions of the substrate, a cathode layer disposed on the substrate, a faceplate disposed above the substrate, and an anode layer disposed between the substrate and the faceplate.
Claims21
A field emission display (FED) having polycrystalline silicon film emitters, comprising:
- a substrate divided into a plurality of pixel regions;
- a plurality of polycrystalline silicon film emitters, each polycrystalline silicon emitter being disposed within each pixel region of the substrate;
- a cathode layer disposed on the substrate;
- a faceplate disposed above the substrate, wherein the polycrystalline film emitters and the cathode layer disposed between the substrate and the faceplate;
- and
- an anode layer disposed between the substrate and the faceplate.
The FED of claim 111, wherein the gate electrode layer comprises a plurality of gate electrodes, and each gate electrode is disposed between any two adjacent pixel regions.
Dependencies are inferred from the claim text.