Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising:

• providing a semiconductor substrate with a scribe lane and a chip area in which a plurality of metal wiring layers are formed;
• forming a dielectric film on the semiconductor substrate;
• forming a first conductive film on the dielectric film in the chip area;
• forming an alignment mark on the dielectric film in the scribe lane;
• forming a first passivation film and a second passivation film on an entire surface of the semiconductor substrate excluding the first conductive film and the alignment mark;
• exposing the first conductive film by removing the first passivation film and the second passivation film corresponding to a portion for a bonding pad in the chip area;
• forming a second conductive film on the portion for the bonding pad to electrically connect with the first conductive film;
• forming a third passivation film on the entire surface of the semiconductor substrate including the second conductive film;
• selectively removing the third passivation film of the portion for the bonding pad;
• and
• selectively removing the second passivation film and the third passivation film in the scribe lane.