Passivation structure for semiconductor devices
OwnerHung-Wen Su, Chien-Hsueh Shih +3inventors
InventorsHung-Wen Su, Chien-Hsueh Shih, Minghsing Tsai, Shau-Lin Shue, Chen-Hua Yu
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Abstract
A system and method for providing a passivation structure for semiconductor devices is provided. In an embodiment, the passivation structure comprises a first barrier layer and a second barrier layer, wherein the second barrier layer may comprise a material, such as cobalt and/or nickel, that is less pure than the first barrier layer. In another embodiment, a single gradient barrier layer is formed. In this embodiment the single gradient barrier layer exhibits a greater pure conductive material, such as cobalt and/or nickel, nearer the conductive line than near the surface.
Claims22
An integrated circuit comprising:
- a conductive layer in a trench of a first dielectric layer;
- and
- a gradient cap layer on the conductive layer.
An integrated circuit comprising:
- a conductive layer in a trench of a first dielectric layer;
- a first cap layer on the conductive layer, the first cap layer comprising a metal alloy that is greater than or equal to about 95% (atomic percent) cobalt, nickel, or combinations thereof;
- and
- a second cap layer on the first cap layer, the second cap layer comprising a metal alloy that is less than or equal to about 95% (atomic percent) cobalt, nickel, or combinations thereof.
An integrated circuit comprising:
- a conductive layer in a trench of a first dielectric layer;
- and
- a gradient cap layer on the conductive layer, wherein the gradient cap layer comprises a metal alloy that is greater than or equal to about 95% (atomic percent) cobalt, nickel, or combinations thereof near the conductive layer and less than or equal to about 95% (atomic percent) cobalt, nickel, or combinations thereof in an area opposite from the conductive layer.
Dependencies are inferred from the claim text.