Method for forming an intermetal dielectric layer using low-k dielectric material and a semiconductor device manufactured thereby

A semiconductor device, comprising:

• (a) at least one layer of metal wiring on a semiconductor substrate, the layer of metal wiring including a plurality of metal wiring patterns;
• (b) a first dielectric layer on the substrate and the plurality of metal wiring patterns;
• (c) a low-k dielectric layer inside a gap encompassed by the first dielectric layer between the plurality of metal wiring patterns, the low-k dielectric layer having a lower dielectric constant than the first dielectric layer;
• and
• (d) a second dielectric layer covering the first dielectric layer and the low-k dielectric layer.

A method for forming an intermetal dielectric layer, comprising the steps of:

• (a) forming a metal layer comprising a plurality of metal wires or lines;
• (b) conformally depositing a first dielectric layer on the plurality of metal wires or lines;
• (c) forming a low-k dielectric layer on the first dielectric layer, the low-k dielectric layer having a lower dielectric constant than the first dielectric layer;
• and
• (d) forming a second dielectric layer on the low-k dielectric layer.

A semiconductor device, comprising:

• (a) at least one layer of metal on a semiconductor substrate, the layer of metal including a plurality of metal wires or lines such that adjacent metal wires or lines have a gap therebetween;
• (b) a conformal first dielectric layer on the substrate and the plurality of metal wires or lines, the conformal first dielectric layer having a thickness of less than half of a width of the gap;
• (c) a low-k dielectric layer in the gap, the low-k dielectric layer having a lower dielectric constant than the first dielectric layer;
• and
• (d) a second dielectric layer over the first dielectric layer and the low-k dielectric layer.