Method of forming air gaps in a dielectric material using a sacrificial film and resulting structures
AssigneeIntel Corporation
InventorsJames Clarke, Michael Goodner
Life of this patent
Estimating the term…
Abstract
A method of forming air gaps surrounding conductors in a dielectric layer, the dielectric layer comprising, for example, part of the interconnect structure of an integrated circuit device. The air gaps are formed, in part, by depositing a sacrificial material within a trench and/or via that have been formed in a dielectric layer, and the sacrificial material is ultimately removed after metal deposition to create the air gaps. A porous dielectric cap may be deposited over the dielectric layer, and the sacrificial material may be removed through this porous dielectric layer. Other embodiments are described and claimed.
Claims16
1-13. (canceled)
A device comprising:
- an integrated circuit die;
- and
- an interconnect structure disposed over a surface of the die, the interconnect structure including
- at least a first dielectric layer disposed over the die surface,
- a number of conductors disposed in the first dielectric layer, at least some of the conductors in electrical communication with conductors of the die,
- an air gap surrounding at least a portion of each conductor in the first dielectric layer, and
- a layer of porous dielectric material disposed over at least a portion of the first dielectric layer.
A system comprising:
- a memory;
- and
- a processing device coupled with the memory, the processing device including an integrated circuit die and an interconnect structure disposed over a surface of the die, the interconnect structure including
- at least a first dielectric layer disposed over the die surface,
- a number of conductors disposed in the first dielectric layer, at least some of the conductors in electrical communication with conductors of the die,
- an air gap surrounding at least a portion of each conductor in the first dielectric layer, and
- a layer of porous dielectric material disposed over at least a portion of the first dielectric layer.
28-33. (canceled)
Dependencies are inferred from the claim text.