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US 2006/0138655 A1Published application
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorKazutaka Takagi
Life of this patent
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Abstract
A semiconductor device includes, a metal base plate, a semiconductor element mounted on the base plate, first and second dielectric plates are mounted on the base plate in the vicinity of the semiconductor element. The first and second dielectric plates are composed of such an insulator material as diamond having higher heat conductivity than that of the base plate material.
Claims16
A semiconductor device comprising:
- a metal base plate;
- a semiconductor element mounted on the base plate;
- a dielectric plate, which is formed with an insulator material having higher heat conductivity than that of the base plate material and is provided on the base plate adjacent to the semiconductor element;
- and
- a circuit pattern formed on a surface of the dielectric plate.
2 more elements
A semiconductor device comprising:
- a base plate;
- a semiconductor element mounted on the base plate;
- a first dielectric plate mounted on the base plate at one side of the semiconductor element, the first dielectric plate being configured to have a first circuit pattern on a surface of the first dielectric plate;
- a second dielectric plate mounted on the base plate at another side of the semiconductor element, the second dielectric plate being configured to have a second circuit pattern on a surface of the second dielectric plate;
- a frame-shaped side wall, provided on the base plate, configured to surround the first dielectric plate, the second dielectric plate and the semiconductor element;
- a power supply portion, provided in a part of the side wall, including an insulator;
- first and second band-shaped conductors configured to penetrate the power supply portion;
- and
- an interconnection configured to connect the first band-shaped conductor with the first circuit pattern, the first circuit pattern with the semiconductor element, the semiconductor element with the second circuit pattern and the second circuit pattern with the second band-shaped conductor, wherein
- at least one of the first dielectric plate and the second dielectric plate is provided adjacent to the semiconductor element, and is formed with an insulator having higher heat conductivity than the base plate.
7 more elements
Dependencies are inferred from the claim text.