Power semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorAtsunobu Kawamoto
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Abstract
The present invention is directed to a power semiconductor device in which a control circuit controls a power switching element, comprising: a semiconductor substrate having a front surface and a back surface; a capacitor disposed on the front surface side of the semiconductor substrate and being comprised of a stacked structure of a first conductive layer, an insulation film and a second conductive layer; and a bonding pad which is disposed on the front surface side to the capacitor and to which a bonding wire being connected, wherein the bonding pad are arranged overlapping the capacitor.
Claims8
A power semiconductor device comprising a control circuit for controlling a power switching element, comprising:
- a semiconductor substrate having a front surface and a back surface;
- a capacitor disposed on the front surface side of the semiconductor substrate and being comprised of a stacked structure of a first conductive layer, an insulation film and a second conductive layer;
- and
- a bonding pad disposed on the front surface side to the capacitor and to which a bonding wire being connected, wherein the bonding pad is arranged overlapping the capacitor.
Dependencies are inferred from the claim text.