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US 2006/0138617 A1Published application
Semiconductor integrated circuit device and method of manufacturing the same
AssigneeRenesas Technology Corp.
InventorsYoshinori Miyaki, Hiromichi Suzuki, Tsuyoshi Kaneda
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Abstract
A semiconductor integrated circuit device is provided which includes a wire having a diameter equal to or less than 30 μm, and a connected member molded by a resin. The connected member includes a metal layer including a palladium layer provided at a portion to which said wire is connected. A solder containing Pb as a main composition metal is provided at a portion outside a portion molded by the resin.
Claims4
A semiconductor integrated circuit device comprising:
- a semiconductor chip having a plurality of surface electrodes;
- a plurality of leads located around said semiconductor chip, each of said plurality of leads having a first surface and a second surface opposing to said first surface and a plating layer selectively formed on said first surface of each of said plurality of leads, said plating layer providing an area for a wire bonding connection;
- and
- a plurality of bonding wires electrically connecting said plurality of surface electrodes of said semiconductor chip with said plurality of leads, respectively, such that one end of each of said plurality of bonding wires is contacted to said plating layer of a corresponding lead of said plurality of leads;
- and
- a resin body sealing said semiconductor chip, said plurality of bonding wires and said plurality of leads including said plating layer,
- wherein said plating layer is comprised of palladium.
4 more elements
A semiconductor integrated circuit device comprising:
- a die pad;
- a plurality of leads located around said die pad, each of said plurality of leads having a first surface and a second surface opposing to said first surface and a plating layer selectively formed on said first surface of each of said plurality of leads, said plating layer providing an area for a wire bonding connection;
- a semiconductor chip being mounted over said die pad, said semiconductor chip having a plurality of surface electrodes;
- a plurality of bonding wires electrically connecting said plurality of surface electrodes of said semiconductor chip with said plurality of leads, respectively, such that one end of each of said plurality of bonding wires is contacted to said plating layer of a corresponding lead of said plurality of leads;
- and
- a resin body sealing said semiconductor chip, said plurality of bonding wires and said plurality of leads including said plating layer,
- wherein said plating layer is comprised of palladium, and
- wherein a diameter of each of said plurality of bonding wires is 30 μm or less.
5 more elements
Dependencies are inferred from the claim text.