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AssigneeInternational Business Machines Corporation
InventorsCyril Cabral, Alessandro Callegari, Michael Gribelyuk, Paul Jamison, Dianne Lacey, Fenton McFeely, Vijay Narayanan, Deborah Neumayer, Pushkar Ranade, Sufi Zafar
Estimating the term…
A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.
1-17. (canceled)
A microcrystalline film comprising hafnium oxide and/or zirconium oxide, said film comprising little or no FTIR detectable C or OH and having a grain size of about 10 nm or less.
The electronic device of claim 29 wherein said SiO2, SiN or SiON layer has a thickness of from about 1 to about 30 Å.
Dependencies are inferred from the claim text.