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US 2006/0138597 A1Published application
Combined high reliability contact metal/ ballast resistor/ bypass capacitor structure for power transistors
OwnerDavid Johnsoninventor
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Abstract
A structure with the combined benefits of a highly reliable ohmic contact, ballast resistor, and ballast resistor bypass capacitor is provided. The benefit of these three features is combined into a single metal-semiconductor contact offering a reduction in space utilization, and complexity normally present in ballast networks associated with power devices.
Claims20
A metal-semiconductor contact structure with the combined benefits of a highly reliable ohmic contact, ballast resistor, and ballast resistor bypass capacitor.
Dependencies are inferred from the claim text.