Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming a stacked film above a semiconductor substrate, the stacked film comprising a first conductive film, a second conductive film provided below the first conductive film, a third conductive film provided below the second conductive film, a first dielectric film provided between the first conductive film and the second conductive film, and a second dielectric film provided between the second conductive film and third conductive film;
• forming a capacitor structure comprising a first electrode formed of the first conductive film, a second electrode formed of the second conductive film, and a third electrode formed of the third conductive film by patterning the stacked film;
• forming an insulating film covering the capacitor structure and having a first hole reaching the first electrode, a second hole reaching the second electrode and a third hole reaching the third electrode;
• and
• forming a first conductive connection electrically connecting the first electrode and the third electrode and having portions buried in the first and third holes, and a second conductive connection formed separately from the first conductive connection and having a portion buried in the second hole.