Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorSung-Kwon Lee
Life of this patent
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Abstract
A semiconductor device capable of preventing a bridge generation during performing an etching process to form a plurality of gate structures on a substrate divided into an active region and a field region and an electrical short between a contact plug and the individual gate structure in the field region and a method for fabricating the same are provided. The semiconductor device includes: a substrate provided with an active region and a field region; a field oxide layer formed in the field region in such a way that the field oxide layer is recessed to be lower than a surface of the substrate disposed in the active region; and a plurality of gate structures formed on the field oxide layer and the substrate in the active region.
Claims9
A semiconductor device, comprising:
- a substrate provided with an active region and a field region;
- a field oxide layer formed in the field region in such a way that the field oxide layer is recessed to be lower than a surface of the substrate in the active region;
- and
- a plurality of gate structures formed on the field oxide layer and the substrate in the active region.
A method for fabricating a semiconductor device, comprising:
- preparing a substrate provided with an active region and a field region by forming a field oxide layer;
- recessing the field oxide layer such that a top surface of the field oxide layer is lower than that of the substrate in the active region;
- forming a plurality of gate structures on the substrate including the recessed field oxide layer and the active region;
- and
- isolating the plurality of gate structures from each other by depositing an inter-layer insulation layer on a resulted structure provided with the plurality of gate electrodes.
Dependencies are inferred from the claim text.