Semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorKwang Ko
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate including a high-voltage transistor area provided with a high-voltage transistor and a low-voltage transistor area provided with a low-voltage transistor; a LOCOS layer provided as a device isolation layer of the high-voltage transistor area; and a shallow-trench isolation layer provided as a device isolation layer of the low-voltage transistor area. Accordingly, a sufficient breakdown voltage level can be provided in a high-voltage transistor area, on-resistance and leakage current can be enhanced, and the chip area in a low-voltage transistor area can be reduced.
Claims10
A semiconductor device, comprising:
- a substrate including a high-voltage transistor area provided with a high-voltage transistor and a low-voltage transistor area provided with a low-voltage transistor;
- a LOCOS layer as a device isolation layer of the high-voltage transistor area;
- and
- a shallow-trench isolation layer as a device isolation layer of the low-voltage transistor area.
A method of fabricating a semiconductor device, comprising:
- providing a LOCOS layer in a high-voltage transistor area;
- and
- providing a shallow-trench isolation layer in a low-voltage transistor area.
Dependencies are inferred from the claim text.