Digital temperature sensing device using temperature depending characteristic of contact resistance
AssigneeHynix Semiconductor Inc.
InventorsHi-Hyun Han, Jun-Gi Choi
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AssigneeHynix Semiconductor Inc.
InventorsHi-Hyun Han, Jun-Gi Choi
Estimating the term…
A digital temperature sensing device uses temperature depending characteristic of contact resistance of a MOS transistor and a self-refresh driving device adjusts its self-refresh period depending on temperature using the digital temperature sensing device. The self-refresh driving device includes a first reference voltage generating unit for generating a reference voltage robust to temperature, the first reference voltage generating means being formed with a plurality of MOS transistors, the number of source contacts of the MOS transistors being adjusted such that variation of saturation current through source-drain is compensated for; a second reference voltage generating unit for generating a second reference voltage sensitive to temperature; a level comparator for comparing the first reference voltage with the second reference voltage; and an oscillator for generating a clock signals having differing period depending on the output signal of the level comparator.
A digital temperature sensing device comprising:
A self-refresh driving device comprising:
A self-refresh driving device comprising:
Dependencies are inferred from the claim text.