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US 2006/0138578 A1Published application
CMOS image sensor and method for fabricating the same
OwnerKeun Liminventor
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Abstract
A CMOS image sensor and a method for fabricating the same in which characteristics of the image sensor are not affected even if a profile of microlenses is varied, so as to obtain a more reliable device. The CMOS image sensor of the present invention includes color filter layers formed over a semiconductor substrate, a planarization layer formed on the color filter layers, and microlenses formed of the same material as that of the planarization layer on the planarization layer, the microlenses positioned to correspond to the color filter layers respectively.
Claims14
A CMOS image sensor comprising:
- color filter layers formed over a semiconductor substrate;
- a planarization layer formed on the color filter layers;
- and
- microlenses formed on the planarization layer, wherein the microlenses are formed of the same material as that of the planarization layer, and are positioned to correspond to the color filter layers.
1 more element
A method for fabricating a CMOS image sensor comprising:
- forming color filter layers over a semiconductor substrate;
- forming a planarization layer on the color filter layers;
- and
- forming microlenses on the planarization layer, wherein the microlenses are formed of the same material as that of the planarization layer in such a way that the microlenses are positioned to correspond to the color filter layers.
1 more element
Dependencies are inferred from the claim text.