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AssigneeCanon Kabushiki Kaisha
InventorSakae Hashimoto
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A photoelectric conversion device according to the present invention has a plurality of photoreceiving portions provided in a substrate, an interlayer film overlying the photoreceiving portion, a large refraction index region which is provided so as to correspond to the photoreceiving portion and has a higher refractive index than the interlayer film, and a layer which is provided in between the photoreceiving portion and the large refraction index region, and has a lower etching rate than the interlayer film, wherein the layer of the lower etching rate is formed so as to cover at least the whole surface of the photoreceiving portion. In addition, the layer of the lower etching rate has a refractive index in between the refractive indices of the large refraction index region and the substrate. Such a configuration can provide the photoelectric conversion device which inhibits the lowering of the sensitivity and the variation of the sensitivity among picture elements.
A photoelectric conversion device having a plurality of photoreceiving portions provided in a substrate, an interlayer film overlying the photoreceiving portions, a large refraction index region corresponding to the photoreceiving portion and has a higher refractive index than the interlayer film, and a layer which is provided between the photoreceiving portion and the large refraction index region, and has a lower etching rate than the interlayer film:
A photoelectric conversion device having a plurality of photoreceiving portions provided in the substrate, a transfer transistor for transferring a signal charge of the photoreceiving portion, an interlayer film overlying the photoreceiving portions, a large refraction index region which is provided so as to correspond to the photoreceiving portion and has a higher refractive index than the interlayer film, and a layer which is provided in between the photoreceiving portion and the large refraction index region, and has a lower etching rate than the interlayer film:
A photoelectric conversion device having a plurality of photoreceiving portions provided in the substrate, an interlayer film overlying the photoreceiving portions, a large refraction index region which is provided so as to correspond to the photoreceiving portion and has a higher refractive index than the interlayer film, a layer which is provided in between the photoreceiving portion and the large refraction index region, and has a lower etching rate than the interlayer film, and an element isolation region arranged between a plurality of the photoreceiving portions:
Dependencies are inferred from the claim text.