Self-aligned conductive lines for fet-based magnetic random access memory devices and method of forming the same
OwnerMichael Galdisinventor
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Abstract
A conductive line structure for a field effect transistor (FET) based magnetic random access memory (MRAM) device includes a lateral metal strap conductively coupled to a lower metallization line. A magnetic tunnel junction (MTJ) stack is formed on the metal strap, and a metal shield is formed over the MTJ stack, the metal shield being self-aligned with respect to the metal strap. An upper metallization line is conductively coupled to the metal shield, wherein the metal shield serves as an etch stop during the formation of the upper metallization line.
Claims15
A conductive line structure for a field effect transistor (FET) based magnetic random access memory (MRAM) device, comprising:
- a lateral metal strap conductively coupled to a lower metallization line;
- a magnetic tunnel junction (MTJ) stack formed on said metal strap;
- a metal shield formed over said MTJ stack, said metal shield being self-aligned with respect to said metal strap;
- and
- an upper metallization line conductively coupled to said metal shield, wherein said metal shield serves as an etch stop during the formation of said upper metallization line.
Dependencies are inferred from the claim text.