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US 2006/0138568 A1Published application
Semiconductor integrated circuit device and a methodof manufacturing the same
OwnerYasuhiro Taniguchi, Shoji Shukuri +3inventors
InventorsYasuhiro Taniguchi, Shoji Shukuri, Kenichi Kuroda, Shuji Ikeda, Takashi Hashimoto
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Abstract
A MISFET capable of a high speed operation includes a metal silicide layer in a high concentration region aligned with a gate side wall layer on a self-alignment basis. A MISFET which can be driven at a high voltage includes an LDD portion having a width greater than the width of the side wall layer, a high concentration region in contact with the LDD portion and a metal silicide layer in the high concentration region.
Claims2
A semiconductor integrated circuit device comprising:
- a first semiconductor region and a second semiconductor region separated from each other on a principal surface of a semiconductor;
- a first MISFET with source and drain regions having an LDD structure constituted by a low concentration region and a high concentration region formed in said first semiconductor region wherein a depth of said high concentration region of said first MISFET is greater than a depth of said low concentration region of said first MISFET;
- and
- a second MISFET with source and drain regions having an LDD structure constituted by a low concentration region and a high concentration region formed in said second semiconductor region wherein a depth of said high concentration region of said second MISFET is greater than a depth of said low concentration region of said second MISFET,
- wherein a conductivity type of said source and drain region of said first MISFET is the same as a conductivity type of said source and drain of said second MISFET,
- wherein an offset length of the low concentration region of said second MISFET is greater than an offset length of the low concentration region of said first MISFET, and
- wherein a metal-semiconductor reaction layer is formed over the surface of the high concentration region of each of said first and second MISFETs.
4 more elements
Dependencies are inferred from the claim text.