Doped nitride film, doped oxide film and other doped films
AssigneeInternational Business Machines Corporation
InventorsAshima Chakravarti, Judson Holt, Kevin Chan, Sadanand Deshpande, Rangarajan Jagannathan
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Abstract
Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.
Claims21
A method of producing a doped silicon nitride film, doped silicon oxide film, doped silicon oxynitride film or doped silicon carbide film, the method comprising at least:
- providing at least one silicon precursor,
- providing at least one of:
- a nitrogen precursor (which may be the same as or different from the silicon precursor) or an oxygen precursor,
- further providing at least one non-silicon precursor (which may be the same as or different from the silicon precursor, the nitrogen precursor and/or the oxygen precursor),
- wherein a doped silicon nitride film, a doped silicon oxide film, a doped silicon oxynitride film or a doped silicon carbide film is formed (provided that when the film is a doped oxide, the non-silicon precursor is not boron and not phosphorous).
20-27. (canceled)
Dependencies are inferred from the claim text.