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US 2006/0138554 A1Published application
Semiconductor device and fabricating method for the same
AssigneeKabushiki Kaisha Toshiba
InventorsMasato Koyama, Akira Nishiyama
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Abstract
The present invention is intended to provide a semiconductor device having a gate electrode free from increasing of resistance of the gate electrode, from decreasing of capacitance of the insulation film due to depletion, and from penetrating of impurity. The semiconductor device comprises a silicon layer, a gate insulating film formed on the silicon layer, a metal boron compound layer formed on the gate insulating film, and a gate electrode formed on the metal boron compound layer and containing at least silicon.
Claims1
A semiconductor device including a CMOS transistor having:
- a p channel MOS transistor comprising
- a substrate,
- an n type silicon layer containing a source region and a drain region provided in or on the substrate and positioned apart from each other, and a channel region provided between the source region and the drain region,
- a gate insulating film formed on the channel region of the n type silicon layer,
- a metal boron compound layer formed on the gate insulating film, and
- a gate electrode formed on the metal boron compound layer and containing at least silicon, and
- an n channel MOS transistor comprising
- a p type silicon layer containing a source region and a drain region provided in or on the substrate and positioned apart from each other, and a channel region provided between the source region and the drain region,
- a gate insulating film formed on the p type silicon layer,
- a metal silicide layer formed on the gate insulating film, and
- a gate electrode formed on the metal silicide layer and containing at least silicon.
8 more elements
Dependencies are inferred from the claim text.