High-voltage transistor and fabricating method thereof
OwnerKwang Koinventor
Life of this patent
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Abstract
A high-voltage transistor having a low on-resistance and fabricating method thereof are provided. The high-voltage transistor includes a substrate; a shallow-trench isolation layer provided to an upper part of the substrate to a prescribed depth to define an active area; an extended drain region enclosing the shallow-trench isolation layer; a source region provided to an upper part of the substrate to be spaced apart from the extended drain region by a channel area; a drain region provided beneath the shallow-trench isolation layer within the extended drain region; a gate insulating layer pattern provided on the channel area; and a gate conductive layer pattern provided on the gate insulating layer pattern.
Claims5
A high-voltage transistor, comprising:
- a substrate;
- a shallow-trench isolation layer in the shallow trench provided to an upper part of the substrate to a prescribed depth to define an active area;
- an extended drain region enclosing the shallow-trench isolation layer;
- a source region provided to an upper part of the substrate to be spaced apart from the extended drain region by a channel area;
- a drain region at a level below the shallow-trench isolation layer within the extended drain region;
- a gate insulating layer pattern provided on the channel area;
- and
- a gate conductive layer pattern provided on the gate insulating layer pattern.
A method of fabricating a high-voltage transistor, comprising:
- forming an extended drain region in a high-voltage transistor area of a semiconductor substrate;
- forming a shallow-trench isolation layer;
- forming a gate stack having a gate insulating layer pattern and a gate conductive layer pattern stacked on the gate insulating layer pattern;
- removing portions of the shallow-trench isolation layer to expose portions of the semiconductor substrate;
- and
- forming a drain region and a source region such that the drain region is formed in the extended drain region at a level below the shallow trench isolation layer.
Dependencies are inferred from the claim text.