Semiconductor device and method of manufacturing same
AssigneeFujitsu Limited
InventorsShunji Nakamura, Yosuke Shimamune
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Abstract
A high-speed, low-power-consumption semiconductor device has a thin-film Si layer with a source/drain formed therein. The thin-film Si layer is curved from a region directly below a gate electrode toward a region near the source/drain. The curved thin-film Si layer develops strains in a channel region disposed directly below the gate electrode sandwiched by the source/drain in the thin-film Si layer, for thereby increasing a carrier mobility. A cavity is defined below the curved thin-film Si layer for reducing a parasitic capacitance due to a pn junction.
Claims9
A semiconductor device having a gate electrode formed on a semiconductor layer with a gate insulating film interposed therebetween and a source/drain formed in the semiconductor layer, said semiconductor layer being curved from a region directly below said gate electrode sandwiched by said source/drain toward a region near said source/drain.
A method of manufacturing a semiconductor device having a gate electrode formed on a semiconductor layer with a gate insulating film interposed therebetween and a source/drain formed in the semiconductor layer, comprising the steps of:
- forming a laminated region of a sacrificial layer and a semiconductor layer and a device separating region surrounding said laminated region, on a substrate;
- forming a gate electrode on said device separating region and said semiconductor layer with a gate insulating film interposed therebetween;
- forming a source/drain in said semiconductor layer in sandwiching relation to a region directly below said gate electrode;
- forming an interlayer insulating film on the entire surface;
- forming a contact hole extending through said interlayer insulating film;
- and
- removing said sacrificial layer through said contact hole to form a cavity below said semiconductor layer.
Dependencies are inferred from the claim text.