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AssigneeDongbuAnam Semiconductor Inc.
InventorHeung Kim
Estimating the term…
A nonvolatile memory device, a method for fabricating the same, and a method for programming/erasing data in the same are provided. At least one of a plurality of device isolation films is filled with polysilicon and used as an acceleration line. The nonvolatile memory device includes a semiconductor substrate defined by a plurality of device isolation regions and an active region, a first electrode layer formed in the at least one device isolation region of the plurality of device isolation regions, an isolation insulating layer filled in the other device isolation region of the plurality of device isolation regions, junction regions formed in a predetermined portion of the active region, a gate insulating film formed on the semiconductor substrate including the plurality of device isolation regions and the junction regions, a tunnel oxide film formed by selectively etching the gate insulating film, and a second electrode layer formed on the gate insulating film to partially overlap the junction regions.
A nonvolatile memory device comprising:
A method for fabricating a nonvolatile memory device comprising:
A method for programming/erasing data in a nonvolatile memory device, the nonvolatile memory device comprising a semiconductor substrate defined by a plurality of device isolation regions and an active region, the plurality of device isolation regions including at least first and second device isolation regions, a first electrode layer formed in the first device isolation region of the plurality of device isolation regions, an isolation insulating layer filled in the second device isolation region of the plurality of device isolation regions, junction regions formed in a predetermined portion of the active region, a gate insulating film formed on the semiconductor substrate including the plurality of device isolation regions and the junction regions, a tunnel oxide film formed by selectively etching the gate insulating film, and a second electrode layer formed on the gate insulating film to partially overlap the junction regions, the method comprising using the first electrode layer as an acceleration line so that a negative voltage or a positive voltage is applied to the first electrode layer to program or erase predetermined data.
Dependencies are inferred from the claim text.