Semiconductor devices, and electronic systems comprising semiconductor devices

A semiconductor device comprising:

• a crystalline layer separated from a semiconductor substrate by a first insulative material;
• the crystalline layer being less than or equal to about 2000 Å thick and comprising silicon/germanium, with the silicon/germanium comprising from about 10 to about 60 atomic percent germanium;
• a floating charge trapping media over the crystalline layer, wherein the charge trapping media is a floating plate comprising silicon enriched oxide or silicon enriched nitride;
• a pair of source/drain regions proximate the charge trapping media and extending into the crystalline layer such that at least a portion- of the source/drain regions are within the crystalline layer;
• the portion of the source/drain regions within the crystalline layer being contained within a single crystal of the silicon/germanium;
• a second insulative material over the charge trapping media, wherein the second insulative material comprises ONO or high k dielectric material;
• and
• a control gate over the second insulative material.