Back to results
US 2006/0138515 A1Published application
Semiconductor device and fabricating method of the same
AssigneeFujitsu Limited
InventorYasutaka Ozaki
Life of this patent
Estimating the term…
Abstract
Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the openings have a diameter greater than that of connecting holes by about 0.4 μm.
Claims33
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film comprising at least a first interlayer insulating film formed on said semiconductor substrate;
- a first plug comprising a conductive material which fills a first connecting hole formed in said first insulating film;
- a capacitor construction comprising a lower electrode, an upper electrode and a dielectric film therebetween;
- a second insulating film comprising at least a laminated-layer construction consisting of a first protective film and a second protective film for preventing degradations of the characteristics of said capacitor construction, said first protective film and said second protective film being laminated with a second interlayer insulating film interposed therebetween and said second insulating film being formed to cover said capacitor construction;
- and
- a second plug comprising a conductive material which fills a second connecting hole, said second connecting hole being formed in said second insulating film such that said first plug is exposed at least at a portion thereof;
- wherein said first protective film is removed at least at the portion which corresponds to said second connecting hole and is in non-contact with said second plug and said first protective film is formed to cover at least said capacitor construction.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a construction which is pattern-formed above said semiconductor substrate;
- an insulating film comprising at least a laminated-layer construction consisting of a first protective film and a second protective film for preventing degradations of the characteristics of said construction, said first protective film and said second protective film being laminated with an interlayer insulating film interposed therebetween and said insulating film being formed to cover said construction;
- and
- a plug comprising a conductive material which fills a connecting hole formed in said insulating film;
- wherein said first protective film is removed at least at the portion which corresponds to said connecting hole and is in non-contact with said plug and said first protective film is formed to cover at least said construction.
3 more elements
A fabricating method of a semiconductor device comprising the steps of:
- forming a first insulating film comprising at least a first interlayer insulating film on a semiconductor substrate;
- forming a first connecting hole in said first insulating film and forming a first plug comprising a conductive material which fills said first connecting hole;
- forming a capacitor construction comprising a lower electrode, an upper electrode and a dielectric film interposed therebetween;
- forming a second insulating film comprising at least a laminated-layer construction consisting of a first protective film and a second protective film for preventing degradations of the characteristics of said capacitor construction, said first protective film and said second protective film being laminated with a second interlayer insulating film interposed therebetween and said second insulating film covering said capacitor construction;
- and
- forming a second connecting hole in said second insulating film such that said first plug is exposed at least at a portion thereof and forming a second plug comprising a conductive material which fills said second connecting hole;
- wherein after forming said first protective film and prior to forming said second interlayer insulating film, said first protective film is processed such that said first protective film is removed at least at the portion which corresponds to said second connecting hole and said first protective film is left to cover said capacitor construction.
4 more elements
A fabricating method of a semiconductor device comprising the steps of:
- pattern-forming a construction above a semiconductor substrate;
- forming an insulating film comprising at least a laminated-layer construction consisting of a first protective film and a second protective film for preventing degradations of the characteristics of said construction through an interlayer insulating film, said first protective film and said second protective film being laminated with an interlayer insulating film interposed therebetween, and said insulating film covering said construction;
- and
- forming a connecting hole in said insulating film and forming a plug comprising a conductive material which fills said connecting hole;
- wherein after forming said first protective film and prior to forming said second interlayer insulating film, said first protective film is processed such that said first protective film is removed at least at the portion which corresponds to said second connecting hole and said first protective film is left to cover at least said capacitor construction.
2 more elements
A fabricating method of a semiconductor device comprising the steps of:
- forming an interlayer insulating film above a semiconductor substrate;
- pattern-forming a connecting hole in said interlayer insulating film;
- embedding an oxidation-prone conductive material in said connecting hole;
- and
- smoothing the surface of said conductive material to form a plug comprising said conductive material embedded in said connecting hole;
- wherein said conductive material is formed to have a thickness greater than the depth of said connecting hole when embedding said conductive material in said connecting hole.
3 more elements
A fabricating method of a semiconductor device comprising the steps of:
- forming an interlayer insulating film above a semiconductor substrate;
- pattern-forming a connecting hole in said interlayer insulating film;
- embedding an oxidation-prone conductive material in said connecting hole;
- and
- smoothing the surface of said conductive material to form a plug comprising said conductive material embedded in said connecting hole;
- wherein the deposition temperature of said conductive material is adjusted to a value within the range of from 400 to 500° C. when embedding said conductive material in said connecting hole.
3 more elements
Dependencies are inferred from the claim text.