Capacitor for a semiconductor device and manufacturing method thereof
AssigneeHynix Semiconductor Inc.
InventorsPyeong Oh, Woo Kim, Hoon Oh, Hyo Yoon, Hyo Yoon, Baik Choi
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Abstract
Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.
Claims19
A capacitor for a semiconductor device, comprising:
- a lower electrode formed over a predetermined lower structure on a semiconductor substrate;
- an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic;
- a yttrium oxynitride film formed over the aluminum oxynitride film and having a relatively higher dielectric constant than the aluminum oxynitride film;
- and
- an upper electrode formed over the yttrium oxynitride film.
A manufacturing method of a capacitor for a semiconductor device, comprising the steps of:
- forming a lower electrode over a predetermined lower structure on a semiconductor substrate;
- forming an aluminum oxynitride film having a low leakage current characteristic over the lower electrode;
- forming a yttrium oxynitride film having a relatively higher dielectric constant than the aluminum oxynitride film over the aluminum oxynitride film;
- and
- forming an upper electrode over the yttrium oxynitride film.
Dependencies are inferred from the claim text.