Methods of manufacturing a capacitor including a cavity containing a buried layer

A method of manufacturing a capacitor, the method comprising:

• forming an interlayer dielectric on a semiconductor substrate;
• forming a metal plug in a predetermined portion of the interlayer dielectric;
• forming an etch stopper and a mold oxide layer on the interlayer dielectric;
• forming a lower electrode region including etching the mold oxide layer and the etch stopper until the metal plug and a region adjacent to the metal plug are exposed;
• sequentially stacking a noble metal layer, an oxygen barrier layer and a buried layer on the mold oxide layer in the lower electrode region;
• filling the lower electrode region by planarizing the buried layer, the oxygen barrier layer and the noble metal layer;
• removing the mold oxide layer to define a lower electrode;
• forming a dielectric layer on the lower electrode;
• and
• forming an upper electrode on the dielectric layer.

A method of manufacturing a capacitor, the method comprising:

• forming an interlayer dielectric on a semiconductor substrate;
• forming a metal plug in a predetermined portion of the interlayer dielectric;
• forming an etch stopper and a mold oxide layer on the interlayer dielectric;
• forming a lower electrode region by etching the mold oxide layer and the etch stopper until the metal plug and a region adjacent to the metal plug are exposed;
• sequentially stacking a noble metal layer, an oxygen barrier layer and a buried layer on the mold oxide layer;
• filling the lower electrode region by planarizing the buried layer, the oxygen barrier layer and the noble metal layer to define a resultant structure;
• thermally treating the resultant structure;
• removing the mold oxide layer and the buried layer;
• removing the oxygen barrier layer to define a lower electrode;
• forming a dielectric layer on the lower electrode;
• and
• forming an upper electrode on the dielectric layer.