Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, and ferroelectric memory
AssigneeSeiko Epson Corporation
InventorsTakeshi Kijima, Yasuaki Hamada, Tomokazu Kobayashi, Hiromu Miyazawa
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Abstract
A ferroelectric film having a ferroelectric shown by a general formula (Pb1-dBid)(B1-aXa)O3, B including at least one of Zr and Ti, X including at least one of Nb and Ta, “a” being in a range of “0.05≦a≦0.4”, and “d” being in a range of “0<d<1”.
Claims19
A ferroelectric film, comprising a ferroelectric shown by a general formula (Pb1-dBid)(B1-aXa)O3,
- B including at least one of Zr and Ti;
- X including at least one of Nb and Ta;
- “a” being in a range of “0.05≦a≦0.4”;
- and
- “d” being in a range of “0<d<1”.
A method of manufacturing a ferroelectric film including a ferroelectric shown by a general formula (Pb1-dBid)(B1-aXa)O3,
- B including at least one of Zr and Ti;
- X including at least one of Nb and Ta;
- “a” being in a range of “0.05≦a≦0.4”;
- “d” being in a range of “0<d<1”;
- and
- the method comprising:
- mixing a sol-gel raw material including a hydrolysis-condensation product of a metal alkoxide containing at least Zr and Ti, a polycarboxylic acid or a polycarboxylic acid ester, and an organic solvent;
- and
- forming a ferroelectric precursor solution including an ester bond by esterification of the polycarboxylic acid or a polycarboxylic acid derived from the polycarboxylic acid ester and the metal alkoxide.
A ferroelectric capacitor, comprising a ferroelectric film having a ferroelectric shown by a general formula (Pb1-dBid)(B1-aXa)O3,
- B including at least one of Zr and Ti;
- X including at least one of Nb and Ta;
- “a” being in a range of “0.05≦a≦0.4”;
- and
- “d” being in a range of “0<d<1”.
A ferroelectric memory, comprising a ferroelectric capacitor having a ferroelectric shown by a general formula (Pb1-dBid)(B1-aXa)O3,
- B including at least one of Zr and Ti;
- X including at least one of Nb and Ta;
- “a” being in a range of “0.05≦a≦0.4”;
- and
- “d” being in a range of “0<d<1”.
A method of manufacturing a ferroelectric film including a ferroelectric shown by a general formula (Pb1-dBid)(B1-aXa)O3,
- B including at least one of Zr and Ti;
- X including at least one of Nb and Ta;
- “a” being in a range of “0.05≦a≦0.4”;
- “d” being in a range of “0<d<1”;
- and
- the method comprising:
- mixing a sol-gel raw material including a hydrolysis-condensation product of a metal alkoxide containing at least Zr and Ti, a polycarboxylic acid or a polycarboxylic acid ester, and an organic solvent;
- forming a ferroelectric precursor solution including an ester bond by esterification of the polycarboxylic acid or a polycarboxylic acid derived from the polycarboxylic acid ester and the metal alkoxide;
- and
- crystallizing the precursor solution.
Dependencies are inferred from the claim text.