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US 2006/0138497 A1Published application
CMOS image sensor and method for fabricating the same
AssigneeDongbuAnam Semiconductor Inc.
InventorDuk Kim
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Abstract
A CMOS image sensor and a method for fabricating the same are disclosed, in which double microlenses are formed using materials having different refractive indexes to improve concentration efficiency of light, thereby improving the characteristics of the image sensor.
Claims19
A CMOS image sensor comprising:
- a semiconductor substrate;
- a plurality of photodiodes formed in the semiconductor substrate with a predetermined distance therebetween;
- an inter-dielectric layer formed on an entire surface of the semiconductor substrate including the photodiodes;
- color filter layers formed on the inter-dielectric layer with a predetermined distance therebetween;
- first microlenses formed over the color filter layers corresponding to the photodiodes;
- and
- second microlenses formed to surround the first microlenses, the second microlenses having a refractive index different from that of the first microlenses.
4 more elements
A method for fabricating a CMOS image sensor comprising:
- forming an inter-dielectric layer on an entire surface of a semiconductor substrate in which a plurality of photodiodes are formed;
- forming color filter layers on the inter-dielectric layer with a predetermined distance therebetween;
- forming first microlenses having a first refractive index over the color filter layers to correspond to the photodiodes;
- and
- forming second microlenses having a second refractive index on the first microlenses in such a way that the second microlenses surround the first microlenses.
2 more elements
Dependencies are inferred from the claim text.