Photodiode in CMOS image sensor and fabricating method thereof
OwnerChang Leeinventor
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Abstract
A photodiode in a CMOS image sensor and fabricating method thereof are disclosed, by which the charge accumulation capacity is enhanced by enlarging a size of a photodiode area. The sensor includes a first epitaxial layer on a semiconductor substrate, a first photodiode area in the first epitaxial layer, a second epitaxial layer on the first epitaxial layer including the first photodiode area, a plug implant in the second epitaxial layer connected to the first photodiode area, and a second photodiode area in the second epitaxial layer, spaced apart from the plug implant and not to be connected to the first photodiode area.
Claims18
A photodiode in a CMOS image sensor, comprising:
- a first epitaxial layer on a semiconductor substrate;
- a first photodiode area in a predetermined surface area of the first epitaxial layer;
- a second epitaxial layer on the first epitaxial layer including the first photodiode area;
- an electrical connector or contact in a predetermined area of the second epitaxial layer, connected to the first photodiode area;
- and
- a second photodiode area in the second epitaxial layer, spaced apart from the plug implant, and not connected to the first photodiode area.
A method of fabricating a photodiode in a CMOS image sensor, comprising the steps of:
- forming a first epitaxial layer on a semiconductor substrate;
- forming a first photodiode area in a predetermined surface area of the first epitaxial layer;
- forming a second epitaxial layer on the first epitaxial layer including the first photodiode area;
- forming an electrical connector or contact in a predetermined area of the second epitaxial layer, connected to the first photodiode area;
- and
- forming a second photodiode area in the second epitaxial layer, spaced apart from the electrical connector or contact and not connected to the first photodiode area.
Dependencies are inferred from the claim text.