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US 2006/0138493 A1Published application
CMOS image sensor and method for fabricating the same
AssigneeDongbu Electronics Co., Ltd.
InventorsHee Shim, Tae Kim
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Abstract
A CMOS image sensor includes a first conductive type semiconductor substrate defined by a photodiode area and a transistor area, a trench formed in the semiconductor substrate corresponding to a transfer transistor of the transistor area, a gate electrode of the transfer transistor, formed in the trench, a second conductive type impurity ion area formed in the semiconductor substrate of the photodiode area, and a first conductive type impurity ion area formed on a surface of the second conductive type impurity ion area.
Claims11
A CMOS image sensor comprising:
- a first conductive type semiconductor substrate having a photodiode area and a transistor area;
- a trench formed in the semiconductor substrate corresponding to a transfer transistor of the transistor area;
- a gate electrode of the transfer transistor formed in the trench;
- a second conductive type impurity ion area formed in the semiconductor substrate of the photodiode area;
- and
- a first conductive type impurity ion area formed on a surface of the second conductive type impurity ion area.
3 more elements
A method for fabricating a CMOS image sensor comprising:
- forming a first insulating film on an entire surface of a first conductive type semiconductor substrate having a photodiode area and a transistor area;
- selectively removing the first insulating film on the transistor area for a transfer transistor;
- forming a trench in the semiconductor substrate corresponding to a portion where the first insulating film is removed;
- forming an impurity ion implantation area for controlling a threshold voltage of the transfer transistor below the trench;
- and
- forming a gate insulating film and a gate electrode of the transfer transistor in the trench.
3 more elements
Dependencies are inferred from the claim text.