CMOS image sensor and method for fabricating the same
OwnerHee Shim, Tae Kiminventors
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Abstract
A CMOS image sensor and a method for fabricating the same are disclosed, in which an impurity ion area is formed in a semiconductor substrate to form a transfer path for optical charges. Dead zone and dark current characteristics are thereby simultaneously improved. The CMOS image sensor includes a first conductive type semiconductor substrate, a device isolation film, a gate electrode, a second conductive type first impurity ion area and a first conductive type first impurity ion area formed with a deposition structure in the semiconductor substrate below the gate electrode, a second conductive type second impurity ion area, and a first conductive type second impurity ion area formed on a surface of the second conductive type second impurity ion area.
Claims10
A CMOS image sensor comprising:
- a first conductive type semiconductor substrate defined by an active area and a device isolation area;
- a device isolation film formed in the first conductive type semiconductor substrate corresponding to the device isolation area;
- a gate electrode formed on the first conductive type semiconductor substrate corresponding to a transistor area of the active area;
- a second conductive type first impurity ion area and a first conductive type first impurity ion area formed with a deposition structure in the semiconductor substrate below the gate electrode;
- a second conductive type second impurity ion area formed in the semiconductor substrate of a photodiode area;
- and
- a first conductive type second impurity ion area formed on a surface of the second conductive type second impurity ion area.
A method for fabricating a CMOS image sensor comprising:
- forming a first conductive type first impurity ion area on a surface of an active area of a first conductive type semiconductor substrate defined by the active area and a device isolation area;
- forming a second conductive type first impurity ion area below the first conductive type first impurity ion area corresponding to a transistor area of the active area;
- forming a gate electrode on the semiconductor substrate corresponding to the transistor area;
- forming a second conductive type second impurity ion area in the semiconductor substrate corresponding to a photodiode area of the active area;
- and
- forming a first conductive type second impurity ion area on a surface of the second conductive type second impurity ion area.
Dependencies are inferred from the claim text.