CMOS image sensor and method for fabricating the same
OwnerJoon Hwanginventor
Life of this patent
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Abstract
A method for fabricating a CMOS image sensor includes forming a photodiode region, a gate electrode, an interlayer dielectric layer, a metal line, and a passivation layer on a semiconductor substrate having a pixel array region and a peripheral circuit region, forming a color filter layer having a plurality of filter elements for filtering colors on the passivation layer of the pixel array region, forming the light-shielding layer on the color filter layer, planarizing the light-shielding layer until surface of the color filter layer are exposed, and forming a microlens on the light-shielding layer.
Claims10
A CMOS image sensor comprising:
- a semiconductor substrate provided with a photodiode region, a gate electrode, an interlayer dielectric layer, and a metal line, wherein the semiconductor substrate has a pixel array region and a peripheral circuit region;
- a color filter layer formed on the semiconductor substrate, the color filter layer having a plurality of filter elements for filtering colors and being formed on the semiconductor substrate at constant intervals;
- a light-shielding layer formed on a region where the respective filter elements join with each other;
- and
- at least one microlens formed on the light-shielding layer of the pixel region.
A method for forming a light-shielding layer of a CMOS image sensor comprising:
- forming a photodiode region, a gate electrode, an interlayer dielectric layer, a metal line and a passivation layer on a semiconductor substrate having a pixel array region and a peripheral circuit region;
- forming a color filter layer having a plurality of filter elements for filtering colors on the passivation layer of the pixel array region;
- forming the light-shielding layer on the color filter layer;
- planarizing the light-shielding layer until at least one surface of the color filter layer is exposed;
- and
- forming at least one microlens on the light-shielding layer.
A method for forming a light-shielding layer of a CMOS image sensor comprising:
- forming a photodiode region, a gate electrode, an interlayer dielectric layer, a metal line and a passivation layer on a semiconductor substrate having a pixel array region and a peripheral circuit region;
- forming a color filter layer having a plurality of filter elements for filtering colors on the passivation layer of the pixel array region;
- forming the light-shielding layer on the passivation layer, including the color filter layer;
- planarizing the light-shielding layer until at least one surface of the color filter layer is exposed;
- and
- forming at least one microlens on the light-shielding layer.
Dependencies are inferred from the claim text.