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US 2006/0138487 A1Published application
CMOS image sensor and method for fabricating the same
OwnerYoung Kiminventor
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Abstract
A CMOS image sensor and a method for fabricating the same are disclosed, in which color filter layers are formed after microlenses are formed, to simplify process steps and maximize transmission efficiency of light, thereby improving performance of the image sensor. The CMOS image sensor includes a plurality of photodiodes formed in a semiconductor substrate, microlenses formed over the semiconductor substrate corresponding to the photodiodes, and color filter layers formed on the microlenses.
Claims12
A CMOS image sensor comprising:
- a semiconductor substrate a plurality of photodiodes formed in the semiconductor substrate;
- microlenses formed over the semiconductor substrate corresponding to the photodiodes;
- and
- color filter layers formed on the microlenses.
1 more element
A method for fabricating a CMOS image sensor comprising:
- forming a plurality of photodiodes in a semiconductor substrate;
- forming microlenses over the semiconductor substrate corresponding to the photodiodes;
- and
- forming color filter layers on the microlenses.
1 more element
Dependencies are inferred from the claim text.