CMOS image sensor and method for fabricating the same
AssigneeDongbuAnam Semiconductor Inc.
InventorChang Hun Han
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Abstract
A CMOS image sensor includes a first conductive type semiconductor substrate having an active region and a device isolation region, a device isolation film formed in the device isolation region of the semiconductor substrate, a second conductive type diffusion region formed in the active region of the semiconductor substrate, and an ion implantation prevention layer formed in the vicinity of the device isolation film, including a boundary portion between the device isolation film and the second conductive type diffusion region.
Claims19
A CMOS image sensor comprising:
- a first conductive type semiconductor substrate having an active region and a device isolation region;
- a device isolation film formed in the device isolation region of the semiconductor substrate;
- a second conductive type diffusion region formed in the active region of the semiconductor substrate;
- and
- an ion implantation prevention layer formed in an area of the device isolation film, including a boundary portion between the device isolation film and the second conductive type diffusion region.
A method for fabricating a CMOS image sensor comprising:
- sequentially forming an oxide film and a nitride film on a first conductive type semiconductor substrate having an active region and a device isolation region;
- selectively etching the nitride film and the oxide film using a mask layer to expose the device isolation region of the semiconductor substrate and form a polymer at sides of the etched nitride and oxide films;
- forming a trench on a surface of the exposed semiconductor substrate using the mask layer and the polymer as masks;
- removing the mask layer and the polymer;
- forming an ion implantation prevention layer in the surface of the semiconductor substrate in which the trench is formed by implanting first conductive type impurity ions into the surface of the semiconductor substrate using the nitride film and the oxide film as masks;
- forming a device isolation film in the trench;
- removing the nitride film and the oxide film;
- and
- forming a second conductive type diffusion region in the active region of the semiconductor substrate to be separated from the device isolation film by the ion implantation prevention layer.
A method for fabricating a CMOS image sensor comprising:
- sequentially forming an oxide film and a nitride film on a first conductive type semiconductor substrate having an active region and a device isolation region;
- selectively etching the nitride film and the oxide film to expose the device isolation region of the semiconductor substrate;
- forming spacers at sides of the nitride and oxide films;
- forming a trench on a surface of the exposed semiconductor substrate using the nitride film and the spacers as masks;
- removing the spacers;
- forming an ion implantation prevention layer in the surface of the semiconductor substrate in which the trench is formed by implanting first conductive type impurity ions into the surface of the semiconductor substrate using the nitride film and the oxide film as masks;
- forming a device isolation film in the trench;
- removing the nitride film and the oxide film;
- and
- forming a second conductive type diffusion region in the active region of the semiconductor substrate to be separated from the device isolation film by the ion implantation prevention layer.
Dependencies are inferred from the claim text.