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US 2006/0138483 A1Published application
CMOS image sensor and method for manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorHee Shim
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Abstract
A CMOS image sensor includes a semiconductor substrate with a first conductive type including a photodiode region and a transistor region, a gate electrode formed on the transistor region of the substrate, a first impurity region with a second conductive type formed in a portion of the semiconductor substrate between the photodiode region and the gate electrode, and a second impurity region with the second conductive type formed in the photodiode region of the semiconductor substrate.
Claims12
A CMOS image sensor comprising:
- a semiconductor substrate with a first conductive type, the semiconductor substrate including a photodiode region and a transistor region;
- a gate electrode formed on the transistor region of the substrate;
- and
- a first impurity region with a second conductive type formed in a portion of the semiconductor substrate between the photodiode region and the gate electrode.
1 more element
A method for manufacturing a CMOS image sensor comprising the steps of:
- preparing a semiconductor substrate with a first conductive type, including a photodiode region and a transistor region;
- forming a gate electrode on the transistor region of the semiconductor substrate;
- and
- forming a first impurity region with a second conductive type in a portion of the semiconductor substrate between the photodiode region and the gate electrode.
1 more element
Dependencies are inferred from the claim text.