Solid-state imaging device and method for manufacturing the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorMasakatsu Suzuki
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Abstract
A solid-state imaging device includes a semiconductor substrate (1) with a photodetector portion (15). The photodetector portion (15) includes a p-type first impurity region (surface inversion layer) (6) formed in the semiconductor substrate (1) and an n-type second impurity region (photoelectric conversion region) (4) formed below the surface inversion layer (6). The photoelectric conversion region (4) is formed by introducing an n-type impurity into the semiconductor substrate (1). The surface inversion layer (6) is formed by introducing indium into a region of the semiconductor substrate (1) where the photoelectric conversion region (4) is formed.
Claims14
A solid-state imaging device comprising a semiconductor substrate with a photodetector portion, the photodetector portion including a p-type first impurity region formed in the semiconductor substrate and an n-type second impurity region formed below the first impurity region,
- wherein the first impurity region contains indium as an impurity.
A method for manufacturing a solid-state imaging device including a semiconductor substrate with a photodetector portion, the photodetector portion including a p-type first impurity region formed in the semiconductor substrate and an n-type second impurity region formed below the first impurity region, the method comprising the steps of
- (a) forming the n-type second impurity region by introducing an n-type impurity into the semiconductor substrate;
- and
- (b) forming the p-type first impurity region by introducing indium into the semiconductor substrate.
Dependencies are inferred from the claim text.