Semiconductor device and method of forming same
AssigneeSamsung Electronis Co., Ltd.
InventorsGyoung-Ho Buh, Yu-Gyun Shin, Chang-Woo Ryoo, Soo-Jin Hong, Jin-Wook Lee, Guk-Hyon Yon
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Abstract
A semiconductor device includes a gate pattern disposed on a semiconductor substrate, a gate spacer disposed on both sidewalls of the gate pattern, and a fixed charge layer disposed in the semiconductor substrate below the gate spacer. Elements generating fixed charges are injected into the fixed charge layer. A layer in which carriers induced by the fixed charge layer are accumulated is disposed below the fixed charge layer. The elements are segregated to a substrate of the semiconductor substrate from the inside of the semiconductor substrate by heat.
Claims26
A semiconductor device comprising:
- a gate pattern disposed on a semiconductor substrate;
- a gate spacer disposed on both sidewalls of the gate pattern;
- a fixed charge disposed in the semiconductor substrate below the gate spacer;
- and
- an inversion layer disposed below the fixed charge layer, the inversion layer being induced by the fixed charge layer,
- wherein elements generating fixed charges are injected into the charge storage layer and segregated to a surface of the semiconductor substrate from the inside of the semiconductor substrate by heat.
A semiconductor device comprising:
- a gate pattern disposed on a semiconductor substrate;
- a gate spacer disposed on both sidewalls of the gate pattern;
- a fixed charge layer disposed in the semiconductor substrate below the gate spacer;
- a lightly doped layer disposed in the semiconductor substrate below the gate spacer to overlap the fixed charge layer and having a lower bottom surface than the fixed charge layer;
- and
- a carrier accumulating layer disposed at the lightly doped layer below the fixed charge layer and induced by the fixed charge layer,
- wherein elements generating fixed charges are injected into the fixed charge layer and segregated to a surface of the semiconductor substrate from the inside of the semiconductor substrate.
A method of forming a semiconductor device, comprising:
- forming a gate pattern on a semiconductor substrate, wherein the semiconductor substrate at opposite sides adjacent to the gate pattern is exposed;
- injecting element ions generating fixed charges into the exposed semiconductor substrate, using the gate pattern as a mask, to form a fixed charge layer;
- and
- forming a gate spacer on both sidewalls of the gate pattern,
- wherein a layer in which carriers induced by the fixed charge is accumulated is formed below the fixed charge layer, and the elements are segregated to a surface of the semiconductor substrate from the inside of the semiconductor substrate by heat.
Dependencies are inferred from the claim text.